A novel transient simulation for 3D multilevel interconnections on complex topography

Author

Hou, Hsin-Ming ; Sheen, Chin-Shown ; Wu, Ching-Yuan

Author_Institution

Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

46

Issue

4

fYear

1999

fDate

4/1/1999 12:00:00 AM

Firstpage

690

Lastpage

695

Abstract

An efficient method is presented to model the transient characteristics of distributed resistor-capacitor of ULSI multilevel interconnections on complex topography, in which the reformulation of the boundary-element method (BEM) and the Pade-via-Lanczos (PVL) algorithm associated with multilayer Green´s function can avoid the redundant works on both volume mesh and transient analysis associated with the finite-difference method. An adaptive multilayer Green´s function is adopted to investigate several cases that have revealed interesting physical mechanisms in charge transfer between conductors on multilayer topography. To improve the timing analysis efficiency of the finite-difference method, the dominant poles are obtained by introducing the PVL algorithm for model-order reduction. Hence, it is easy to calculate the transient characteristics of both parallel conductors and complicated configurations such as crossing lines, corners, contacts, multilayers, and their combinations

Keywords

Green´s function methods; ULSI; boundary-elements methods; circuit layout CAD; circuit simulation; digital simulation; integrated circuit interconnections; integrated circuit layout; timing; transient analysis; 3D multilevel interconnections; Pade-via-Lanczos algorithm; ULSI; adaptive multilayer Green´s function; boundary-element method; charge transfer; complex topography; contacts; corners; crossing lines; distributed resistor-capacitor; model-order reduction; multilayers; parallel conductors; timing analysis efficiency; transient simulation; Algorithm design and analysis; Charge transfer; Conductors; Finite difference methods; Green´s function methods; Nonhomogeneous media; Surfaces; Timing; Transient analysis; Ultra large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.753702

Filename

753702