DocumentCode :
1489146
Title :
Hybrid Integration of Photonic Crystal Membrane Lasers via Postprocess Bonding
Author :
Sulkin, J.D. ; Choquette, K.D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
Volume :
3
Issue :
3
fYear :
2011
fDate :
6/1/2011 12:00:00 AM
Firstpage :
375
Lastpage :
380
Abstract :
Photonic crystal (PhC) lasers in InGaAsP membranes are bonded after fabrication to a sapphire substrate. The processed devices are held to the sapphire by van der Waals forces and do not require a high temperature anneal. PhC H2 defect cavity devices are found to lase continuous wave and line defect heterostructure devices lase pulsed, both under optical excitation. Postprocess bonding allows extensive fabrication on the native substrate before being transferred to a new substrate, which may be useful for making more complex nanophotonic devices and/or electrically injected devices.
Keywords :
III-V semiconductors; bonding processes; gallium arsenide; gallium compounds; indium compounds; integrated optics; nanophotonics; optical pulse generation; optical pumping; photonic crystals; semiconductor lasers; van der Waals forces; Al2O3; InGaAsP; defect cavity; electrically injected devices; hybrid integration; line defect heterostructure devices; nanophotonic devices; optical excitation; optical pulse generation; photonic crystal membrane lasers; postprocess bonding; sapphire substrate; van der Waals forces; Biomembranes; Bonding; Laser excitation; Laser modes; Photonic crystals; Substrates; Photonic crystal lasers; integrated nanophotonic systems; semiconductor lasers;
fLanguage :
English
Journal_Title :
Photonics Journal, IEEE
Publisher :
ieee
ISSN :
1943-0655
Type :
jour
DOI :
10.1109/JPHOT.2011.2139199
Filename :
5742961
Link To Document :
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