Electrical characteristics of 0°/±45°/90°-orientation CMOSFET with source/drain fabricated by various ion-implantation methods

Electrical characteristics of 0°/±45°/90°-orientation 0.5-μm CMOSFETs with source/drain regions fabricated by three ion-implantation methods are discussed. For asymmetrical one-sided 7°-implantation method, large-device-orientation dependent fluctuation and asymmetry were observed in (saturation drain current I_D and maximum substrate current I_B of both n- and p-MOSFETs/threshold voltage V_T of p-MOSFETs) and (I_D of n-MOSFETs/I _B of both n- and p-MOSFETs), respectively. Almost comparable characteristics were obtained for n-MOSFETs fabricated by symmetrical 0°-implantation and 7°×4-implantation methods. However, I _D difference in p-MOSFETs between 0°/90°- and ±45°-orientation devices, which may be affected by intraplanar anisotropy of hole drift velocity, was observed independently of the ion-implantation method