Title :
An 0.3-μm Si epitaxial base BiCMOS technology with 37-GHz fmax and 10-V BVceo for RF telecommunication
Author :
Nii, Hideaki ; Yoshino, Chihiro ; Yoshitomi, Sadayuki ; Inoh, Kazumi ; Furuya, Hiromi ; Nakajima, Hiroomi ; Sugaya, Hiroyuki ; Naruse, Hiroshi ; Katsumata, Yasuhiro ; Iwai, Hiroshi
Author_Institution :
Lab. of Microelectron. Eng., Toshiba Corp., Kawasaki, Japan
fDate :
4/1/1999 12:00:00 AM
Abstract :
In this paper, a 0.3-μm BiCMOS technology for mixed analog/digital application is presented. A typical emitter area of this technology is 0.3 μm×1.0 μm. This technology includes high f max of 37 GHz at the low collector current of 300 μA and high BVceo of 10 V NPN transistor, CMOS with Leff=0.3 μm, and passive elements. By using the shallow and deep trench isolation technology and nonselective epitaxial intrinsic base, the Cjc can be reduced to 1.6 fF, which is the lowest value reported so far. As a results, we have managed to obtain the high fmax at the low current region and high BV ceo concurrently. These features will contribute to the development of high-performance BiCMOS LSI´s for various mixed analog/digital applications
Keywords :
BiCMOS integrated circuits; MMIC; UHF integrated circuits; elemental semiconductors; isolation technology; mixed analogue-digital integrated circuits; silicon; 0.3 micron; 10 V; 300 muA; 37 GHz; RF telecommunication; Si; collector current; emitter area; epitaxial base BiCMOS technology; low current region; mixed analog/digital application; nonselective epitaxial intrinsic base; passive elements; trench isolation technology; BiCMOS integrated circuits; CMOS technology; Epitaxial growth; Germanium silicon alloys; Isolation technology; Parasitic capacitance; Radio frequency; Signal processing; Silicon germanium; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
