DocumentCode :
148916
Title :
Plasma assisted bonding of copper and silver substrates
Author :
Fujino, Masahisa ; Abe, Kiyohiko ; Suga, Takashi
Author_Institution :
Dept. of Precision Eng., Univ. of Tokyo, Tokyo, Japan
fYear :
2014
fDate :
23-25 April 2014
Firstpage :
648
Lastpage :
651
Abstract :
In this research, copper and silver substrates have been bonded by plasma activated bonding method at 190°C. Furthermore, additional formic acid process after plasma process for both surfaces had effect to be bonded more tightly. The surface conditions were analyzed by SEM, AFM and XPS. As results, silver surfaces were etched and smoothed by plasma, and the surface oxidation adsorbent was removed, according to XPS O1s spectra. Moreover, oxidation layer of silver surface was reduced by formic acid process. On the other hand, copper surface was less changed by plasma, but copper surface was also reduced, and copper precipitation was observed on the surface by formic acid process.
Keywords :
X-ray photoelectron spectra; atomic force microscopy; bonding processes; oxidation; precipitation; scanning electron microscopy; sputter etching; AFM; Ag; Cu; SEM; XPS; copper precipitation; copper substrates; formic acid process; oxidation layer; plasma activated bonding; plasma assisted bonding; plasma etching; plasma process; plasma smoothing; silver substrates; surface conditions; surface oxidation adsorbent; temperature 190 degC; Bonding; Copper; Heating; Plasmas; Silver; Surface morphology; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Packaging (ICEP), 2014 International Conference on
Conference_Location :
Toyama
Print_ISBN :
978-4-904090-10-7
Type :
conf
DOI :
10.1109/ICEP.2014.6826760
Filename :
6826760
Link To Document :
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