Title :
The combined effects of deuterium anneals and deuterated barrier-nitride processing on hot-electron degradation in MOSFET´s
Author :
Ference, Thomas G. ; Burnham, Jay S. ; Clark, William F. ; Hook, Terence B. ; Mittl, Steven W. ; Watson, Kimball M. ; Han, Liang-Kai Kevin
Author_Institution :
Div. of Microelectron., IBM Corp., Essex Junction, VT, USA
fDate :
4/1/1999 12:00:00 AM
Abstract :
This paper describes the combined effects of deuterium anneals and deuterated barrier-nitride processing on hot-electron degradation in MOSFETs. Devices subjected to a 60-min, 400°C, 10% deuterium/90% nitrogen anneal after silicidization show a 32× improvement in hot-electron lifetime. These same devices are then passivated with a deuterated barrier-nitride layer formed using deuterated ammonia (ND3) and conventional silane (SiH4). Further deuterium anneals along with conventional contact and metal-level processes are used to integrate the devices. Hot-electron stressing and SIMS analysis performed at various points in the processing give insight to methods of retaining the beneficial effects of deuterium during subsequent thermal processing
Keywords :
MOSFET; annealing; hot carriers; secondary ion mass spectroscopy; semiconductor device measurement; semiconductor device reliability; 400 degC; 60 min; MOSFET; SIMS analysis; anneals; deuterated barrier-nitride processing; hot-electron degradation; hot-electron lifetime; metal-level processes; silicidization; thermal processing; Annealing; Degradation; Deuterium; Hot carriers; Hydrogen; Neodymium; Nitrogen; Performance analysis; Silicon; Thermal stresses;
Journal_Title :
Electron Devices, IEEE Transactions on
