High-Power 625-nm AlGaInP Laser Diode

Author

Shimada, Naoyuki ; Ohno, Akihito ; Abe, Shinji ; Miyashita, Motoharu ; Yagi, Tetsuya

Author_Institution

High Freq. & Opt. Device Works, Mitsubishi Electr. Corp., Itami, Japan

Volume

17

Issue

6

fYear

2011

Firstpage

1723

Lastpage

1726

Abstract

Highly efficient quantum well laser diode is promising as a red light source for laser display. In the wavelength range of red light, short lasing wavelength is preferred because spectral luminous efficiency increases sharply as wavelength shortens. In this paper, we present high-power AlGaInP laser diode with remarkably short lasing wavelength of 625 nm. The fabricated device showed 220 mW and 44 lm output at 25 ^°C under CW operation. Efficiency was measured as 24 lm/W. Comparisons to 630-nm and 638-nm laser diodes are also presented.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light sources; optical fabrication; quantum well lasers; AlGaInP; high-power laser diode; laser display; lasing wavelength; power 220 mW; quantum well laser diode; red light source; spectral luminous efficiency; temperature 25 degC; wavelength 625 nm; Diode lasers; Light sources; Optical device fabrication; Quantum well lasers; Semiconductor lasers; Temperature measurement; AlGaInP; laser diode; laser display; red; window mirror;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2011.2121895

Filename

5742968