• DocumentCode
    1489213
  • Title

    Electric-field penetration into metals: consequences for high-dielectric-constant capacitors

  • Author

    Black, Charles T. ; Welser, Jeffrey J.

  • Author_Institution
    Div. of Res., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • Volume
    46
  • Issue
    4
  • fYear
    1999
  • fDate
    4/1/1999 12:00:00 AM
  • Firstpage
    776
  • Lastpage
    780
  • Abstract
    A consequence of the finite electronic screening length in metals is that electric fields penetrate short distances into the metal surface. Using a simple, semiclassical model of an idealized capacitor, we estimate the capacitance correction due to the distribution of displacement charge in the metal electrodes. We compare our result with experimental data from thin-film high-dielectric-constant capacitors, which are currently leading contenders for use in future high-density memory applications. This intrinsic mechanism contributes to the universally-seen decrease in measured dielectric constant with capacitor film thickness
  • Keywords
    MIM devices; permittivity; thin film capacitors; capacitance; displacement charge distribution; electric field penetration; electronic screening length; high-density memory; high-dielectric-constant capacitor; metal electrode; metal-dielectric-metal thin-film capacitor; semiclassical model; Capacitance; Dielectric constant; Dielectric materials; Dielectric thin films; Electrodes; Electrons; MIM capacitors; MOS capacitors; Metal-insulator structures; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.753713
  • Filename
    753713