DocumentCode
1489213
Title
Electric-field penetration into metals: consequences for high-dielectric-constant capacitors
Author
Black, Charles T. ; Welser, Jeffrey J.
Author_Institution
Div. of Res., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume
46
Issue
4
fYear
1999
fDate
4/1/1999 12:00:00 AM
Firstpage
776
Lastpage
780
Abstract
A consequence of the finite electronic screening length in metals is that electric fields penetrate short distances into the metal surface. Using a simple, semiclassical model of an idealized capacitor, we estimate the capacitance correction due to the distribution of displacement charge in the metal electrodes. We compare our result with experimental data from thin-film high-dielectric-constant capacitors, which are currently leading contenders for use in future high-density memory applications. This intrinsic mechanism contributes to the universally-seen decrease in measured dielectric constant with capacitor film thickness
Keywords
MIM devices; permittivity; thin film capacitors; capacitance; displacement charge distribution; electric field penetration; electronic screening length; high-density memory; high-dielectric-constant capacitor; metal electrode; metal-dielectric-metal thin-film capacitor; semiclassical model; Capacitance; Dielectric constant; Dielectric materials; Dielectric thin films; Electrodes; Electrons; MIM capacitors; MOS capacitors; Metal-insulator structures; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.753713
Filename
753713
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