Title :
Poly-diamond gated field-emitter display cells
Author :
Hong, D. ; Aslam, D.M.
Author_Institution :
Dept. of Electr. Eng. & Comput. Eng., Michigan State Univ., East Lansing, MI, USA
fDate :
4/1/1999 12:00:00 AM
Abstract :
A microchip containing gated field-emitter display (FED) cells is designed and fabricated using vapor-deposited p-type polycrystalline diamond films and employing an integrated circuit (IC)-compatible diamond film technology on oxidized 4-in Si wafers. Current-voltage (I-V) data, measured in a diode configuration at 10-6 torr, show Fowler-Nordheim (F-N) field emission behavior. A 1×4 pixel diamond gated display cell is demonstrated for the first time using phosphor-coated glass as an anode
Keywords :
CVD coatings; diamond; elemental semiconductors; field emission displays; semiconductor thin films; 1E-6 torr; 4 in; C; CVD; Fowler-Nordheim field emission behavior; IC-compatible film technology; current-voltage data; diode configuration; gated field-emitter display cells; phosphor-coated glass anode; vapor-deposited p-type polycrystalline films; Anodes; Fabrication; Flat panel displays; Glass; Integrated circuit technology; Phosphors; Powders; Prototypes; Resists; Semiconductor films;
Journal_Title :
Electron Devices, IEEE Transactions on
