DocumentCode :
1489247
Title :
A simple voltage scaling formula for low-power CMOS circuits
Author :
Kang, Dae-Gwan ; Park, Young June ; Min, Hong Shick
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Volume :
46
Issue :
4
fYear :
1999
fDate :
4/1/1999 12:00:00 AM
Firstpage :
803
Lastpage :
805
Abstract :
A simple formula is proposed for the analysis of the gate delay of CMOS gate under low VDD. The effects of device parameters on gate delay and energy are readily obtained using the formula. Thus, it has the potential for use in the design of device parameters in the low VDD CMOS circuits
Keywords :
CMOS integrated circuits; delays; integrated circuit design; network analysis; gate delay; low-power CMOS circuits; voltage scaling formula; Delay effects; Equations; Inverters; Low voltage; MOSFET circuits; Semiconductor device modeling; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.753718
Filename :
753718
Link To Document :
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