DocumentCode :
148925
Title :
High-ON/OFF-contrast 10-Gb/s silicon Mach-zehnder modulator in high-speed low-loss package
Author :
Ishihara, H. ; Oda, K. ; Ori, Teijiro ; Goi, Kazuhiro ; Ogawa, Koichi ; Tsung-Yang Liow ; Xiaoguang Tu ; Guo-Qiang Lo ; Dim-Lee Kwong
Author_Institution :
Fujikura Ltd., Sakura, Japan
fYear :
2014
fDate :
23-25 April 2014
Firstpage :
680
Lastpage :
683
Abstract :
10-Gb/s silicon-based Mach-Zehnder modulator is packaged and characterized. The I/O sections of the modulator chip are located at longer-facet sides using bends waveguides for enhancing modulation bandwidth by using short straight configuration of traveling-wave electrodes. Low-insertion loss and high-return-loss optical coupling structure between input/output lenses and the modulator chip is achieved with optical coupling, where both of chip facets and inverted-taper mode-field-convertors are angled with respect to incident light beam. 3-dB electro-optic bandwidth is as high as 12.0-GHz and optical insertion loss is 9-dB or lower. High-contrast eye diagram with an extinction ratio of 13.8-dB is obtained.
Keywords :
electronics packaging; elemental semiconductors; modulators; optical losses; silicon; Mach-Zehnder modulator; Si; bends waveguides; chip facets; high return loss optical coupling structure; high speed low loss package; inverted taper mode field convertors; low insertion loss; modulator chip; traveling wave electrodes; Integrated optics; Optical attenuators; Optical coupling; Optical losses; Optical modulation; Optical waveguides; 10-Gb/s NRZ-OOK; Traveling-wave electrodes; lens coupling; silicon modulator;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Packaging (ICEP), 2014 International Conference on
Conference_Location :
Toyama
Print_ISBN :
978-4-904090-10-7
Type :
conf
DOI :
10.1109/ICEP.2014.6826765
Filename :
6826765
Link To Document :
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