Title :
Metal node contact TFT SRAM cell for high-speed, low-voltage applications
Author :
Son, K.S. ; Kwon, S.W. ; Lee, Y.J. ; Kim, Dae M.
Author_Institution :
Div. of Memory Product & Technol. Dev., Hyundai Electron. Ind. Co. Ltd., Kyungki, South Korea
fDate :
4/1/1999 12:00:00 AM
Abstract :
The parasitic diode contact in the bottom gate thin-film transistor (TFT) static random access memory (SRAM) cell limits its high node charging current. The charging of 15 fF load capacitor to 0.1-0.2 V below Vcc takes about 0.65 ms. This adverse effect is circumvented in the metal contact TFT SRAM cell, whose charging to full Vcc is seven times faster
Keywords :
MOS memory circuits; SRAM chips; elemental semiconductors; insulated gate field effect transistors; silicon; thin film transistors; 0.1 to 0.2 V; 0.65 ms; 15 fF; Si; TFT SRAM cell; bottom gate thin-film transistor; high node charging current; high-speed; low voltage; metal node contact; Aluminum; Boron; Capacitors; Contacts; Degradation; Diodes; Random access memory; SRAM chips; Thin film transistors; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
