Title :
A simple and unambiguous definition of threshold voltage and its implications in deep-submicron MOS device modeling
Author :
Zhou, X. ; Lim, K.Y. ; Lim, D.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
fDate :
4/1/1999 12:00:00 AM
Abstract :
A new definition of MOSFET threshold voltage is proposed, namely, the “critical-current at linear-threshold” method, which has a unique solution and is very simple to measure. This definition gives consistent values of threshold voltage for different regions of operation at long channel, and contains the information on short-channel effects at short channel, which is very useful for deep-submicron MOS device characterization and modeling. The proposed method effectively removes ambiguity of de facto industry standard of the constant-current method for MOS threshold voltage
Keywords :
MOSFET; semiconductor device measurement; semiconductor device models; voltage measurement; MOS threshold voltage; MOSFET; constant-current method; critical-current; deep-submicron MOS device; linear-threshold; modeling; short-channel effects; threshold voltage; Current measurement; Electrical resistance measurement; Immune system; MOS devices; MOSFET circuits; Semiconductor device manufacture; Threshold voltage; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
