Title :
Assessment of beryllium out-diffusion in AlGaAs/GaAs heterojunction bipolar transistors using low-temperature photoluminescence technique
Author :
Wang, Hong ; Ng, Geok Ing ; Zheng, Haiqun ; Zhang, Penghua
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
fDate :
4/1/1999 12:00:00 AM
Abstract :
Low-temperature photoluminescence (PL) is used for the investigation of beryllium (Be) dopant out-diffusion in AlGaAs/GaAs abrupt single-heterojunction bipolar transistors (HBTs). The degree of Be out-diffusion into the emitter from a Be-doped base can be estimated based on the band gap narrowing effect (BGNE). The measured current gain and emitter-base turn-on voltage of HBTs fabricated on wafers with different growth conditions were found to correlate well with the PL results
Keywords :
III-V semiconductors; aluminium compounds; beryllium; diffusion; doping profiles; gallium arsenide; heterojunction bipolar transistors; photoluminescence; semiconductor device measurement; semiconductor doping; AlGaAs-GaAs:Be; AlGaAs/GaAs heterojunction bipolar transistors; Be out-diffusion; Be-doped base; band gap narrowing effect; emitter-base turn-on voltage; measured current gain; photoluminescence; single-heterojunction bipolar transistors; Electrical resistance measurement; Gallium arsenide; Heterojunction bipolar transistors; MOSFET circuits; Molecular beam epitaxial growth; Photoluminescence; Photonic band gap; Solid state circuits; Threshold voltage; Ultra large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
