Assessment of beryllium out-diffusion in AlGaAs/GaAs heterojunction bipolar transistors using low-temperature photoluminescence technique

Author

Wang, Hong ; Ng, Geok Ing ; Zheng, Haiqun ; Zhang, Penghua

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore

Volume

46

Issue

4

fYear

1999

fDate

4/1/1999 12:00:00 AM

Firstpage

809

Lastpage

811

Abstract

Low-temperature photoluminescence (PL) is used for the investigation of beryllium (Be) dopant out-diffusion in AlGaAs/GaAs abrupt single-heterojunction bipolar transistors (HBTs). The degree of Be out-diffusion into the emitter from a Be-doped base can be estimated based on the band gap narrowing effect (BGNE). The measured current gain and emitter-base turn-on voltage of HBTs fabricated on wafers with different growth conditions were found to correlate well with the PL results

Keywords

III-V semiconductors; aluminium compounds; beryllium; diffusion; doping profiles; gallium arsenide; heterojunction bipolar transistors; photoluminescence; semiconductor device measurement; semiconductor doping; AlGaAs-GaAs:Be; AlGaAs/GaAs heterojunction bipolar transistors; Be out-diffusion; Be-doped base; band gap narrowing effect; emitter-base turn-on voltage; measured current gain; photoluminescence; single-heterojunction bipolar transistors; Electrical resistance measurement; Gallium arsenide; Heterojunction bipolar transistors; MOSFET circuits; Molecular beam epitaxial growth; Photoluminescence; Photonic band gap; Solid state circuits; Threshold voltage; Ultra large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.753721

Filename

753721