Title :
A study of rapid photothermal annealing on the electrical properties and reliability of tantalum pentoxide
Author :
Chen, Y. ; Singh, R. ; Rajan, K. ; Dumin, D.J. ; DeBoer, S. ; Thakur, R.P.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Clemson Univ., SC, USA
fDate :
4/1/1999 12:00:00 AM
Abstract :
Rapid photothermal annealing is based on the use of vacuum ultraviolet (VUV) photons as the source of optical energy and tungsten halogen lamps as the source of optical and thermal energy. Tantalum pentoxide (Ta2O5) thin films deposited by thermal metalorganic chemical vapor deposition (MOCVD) have been annealed by RPP and conventional rapid thermal annealing (RTP). As compared to samples annealed by RTP, lower leakage current and lower trap densities were observed in the samples annealed by RPP
Keywords :
MOCVD coatings; dielectric thin films; rapid thermal annealing; tantalum compounds; Ta2O5; electrical properties; leakage current; rapid photothermal annealing; reliability; tantalum pentoxide thin film; thermal metalorganic chemical vapor deposition; trap density; tungsten halogen lamp; vacuum ultraviolet irradiation; Chemical vapor deposition; High K dielectric materials; Leakage current; Optical films; Rapid thermal annealing; Rapid thermal processing; Residual stresses; Semiconductor films; Silicon; Thermal stresses;
Journal_Title :
Electron Devices, IEEE Transactions on
