DocumentCode
1489293
Title
On the accuracy of generation lifetime measurement in high-resistivity silicon using PN gated diodes
Author
Verzellesi, G. ; Betta, G. F Dalla ; Bosisio, L. ; Boscardin, M. ; Pignatel, G.U. ; Soncini, G.
Author_Institution
Dipt. di Ingegneria dei Mater., Trento Univ., Italy
Volume
46
Issue
4
fYear
1999
fDate
4/1/1999 12:00:00 AM
Firstpage
817
Lastpage
820
Abstract
We show that in high-resistivity silicon bulk generation lifetime and surface generation velocity can not be measured with acceptable accuracy using a single gated diode, unless the gate length is suitably tailored. The accuracy with which bulk generation lifetime can be evaluated is, in particular, limited by nonidealities, contributing extra components to the gated-diode current, which are not accounted for in the standard extraction procedure
Keywords
carrier lifetime; elemental semiconductors; semiconductor diodes; silicon; PN gated diode; Si; bulk generation lifetime; high-resistivity silicon; measurement technique; parameter extraction; surface generation velocity; Boundary conditions; DC generators; Length measurement; Lifetime estimation; Measurement errors; Measurement techniques; P-i-n diodes; Silicon; Velocity measurement; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.753724
Filename
753724
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