Title :
On the accuracy of generation lifetime measurement in high-resistivity silicon using PN gated diodes
Author :
Verzellesi, G. ; Betta, G. F Dalla ; Bosisio, L. ; Boscardin, M. ; Pignatel, G.U. ; Soncini, G.
Author_Institution :
Dipt. di Ingegneria dei Mater., Trento Univ., Italy
fDate :
4/1/1999 12:00:00 AM
Abstract :
We show that in high-resistivity silicon bulk generation lifetime and surface generation velocity can not be measured with acceptable accuracy using a single gated diode, unless the gate length is suitably tailored. The accuracy with which bulk generation lifetime can be evaluated is, in particular, limited by nonidealities, contributing extra components to the gated-diode current, which are not accounted for in the standard extraction procedure
Keywords :
carrier lifetime; elemental semiconductors; semiconductor diodes; silicon; PN gated diode; Si; bulk generation lifetime; high-resistivity silicon; measurement technique; parameter extraction; surface generation velocity; Boundary conditions; DC generators; Length measurement; Lifetime estimation; Measurement errors; Measurement techniques; P-i-n diodes; Silicon; Velocity measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
