Title :
An 0.1-μm asymmetric halo by large-angle-tilt implant (AHLATI) MOSFET for high performance and reliability
Author :
Shin, Hyungsoon ; Lee, Seungjun
Author_Institution :
Dept. of Electron Eng., Ewha Women´´s Univ., Seoul, South Korea
fDate :
4/1/1999 12:00:00 AM
Abstract :
A new 0.1-μm MOSFET structure called asymmetric halo by large-angle-tilt implant (AHLATI) is proposed for substantial reduction of short-channel and hot-carrier effects while enhancing the current driving capability. This structure differs from the conventional devices in that it has an asymmetric channel profile with a localized pileup region next to the source junction
Keywords :
MOSFET; hot carriers; ion implantation; 0.1 micron; AHLATI MOSFET; asymmetric halo by large-angle-tilt implant; current driving; hot carrier effect; reliability; short channel effect; Data analysis; Data mining; Implants; MOSFET circuits; Performance analysis; Semiconductor diodes; Silicon; Solid state circuits; Testing; Velocity measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
