• DocumentCode
    1489363
  • Title

    Toward System on Chip (SoC) Development Using FinFET Technology: Challenges, Solutions, Process Co-Development & Optimization Guidelines

  • Author

    Shrivastava, Mayank ; Mehta, Ruchit ; Gupta, Shashank ; Agrawal, Nidhi ; Baghini, Maryam Shojaei ; Sharma, Dinesh Kumar ; Schulz, Thomas ; Arnim, K. ; Molzer, Wolfgang ; Gossner, Harald ; Rao, V. Ramgopal

  • Author_Institution
    Intel Mobile Commun., Hopewell Junction, NY, USA
  • Volume
    58
  • Issue
    6
  • fYear
    2011
  • fDate
    6/1/2011 12:00:00 AM
  • Firstpage
    1597
  • Lastpage
    1607
  • Abstract
    In this paper, the impact of process/technology co-optimization on System-on-Chip (SoC) performance using detailed 3-D process/device simulations has been studied for nanoscale FinFET devices. We investigated challenges in FinFET device optimization and scaling while using standard ion implantation process for both overlap and underlap designs. Moreover, an implant-free (IF) complementary metal-oxide-semiconductor process is discussed for better scalability with improved performance. FinFETs designed using this IF process shows a ~2× improvement in static random-access memory and digital input/ output performance. Additionally, a modification to the IF process is proposed, which further helps in achieving an improved logic and analog performance for overall SoC development.
  • Keywords
    CMOS integrated circuits; CMOS memory circuits; MOSFET; nanotechnology; system-on-chip; 3D process/device simulation; FinFET device optimization; FinFET technology; SoC development; implant-free complementary metal-oxide-semiconductor process; nanoscale FinFET device; optimization guideline; static random-access memory; system-on-chip; FinFETs; Ion implantation; Leakage current; Performance evaluation; Solid modeling; System-on-a-chip; Extremely thin SOI (ETSOI); FinFET; implant-free process; ion implantation and system-on-chip (SoC); process co-optimization; scaling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2011.2123100
  • Filename
    5742994