Low-temperature GaAs/SiC wafer bonding with Au thin film for high-power semiconductor lasers

Author

Okumura, Katsuhiro ; Higurashi, Eiji ; Suga, Takashi ; Hagiwara, Kazuki

Author_Institution

Univ. of Tokyo, Tokyo, Japan

fYear

2014

fDate

23-25 April 2014

Firstpage

716

Lastpage

719

Abstract

High heat dissipation structure obtained by low-temperature Au-Au bonding method for GaAs based high-power semiconductor lasers is presented in this paper. Numerical simulation using the finite element method showed that the solder layer between the semiconductor chip and heat sink has a strong influence on the thermal resistance and thin Au interlayer (thermal conductivity: 317 W/mK) is effective to reduce thermal resistance in comparison to AuSn (80 wt% Au) solder layer (thermal conductivity: 57 W/mK). In the experiments Au thin film (thickness less than ~ 50 nm) was used to bond GaAs and SiC wafers (2 inch). Wafer-scale GaAs/Au/SiC hetero structure has been demonstrated for high power laser applications.

Keywords

III-V semiconductors; cooling; finite element analysis; gallium arsenide; gold; heat sinks; metallic thin films; semiconductor lasers; silicon compounds; solders; thermal conductivity; thermal resistance; wafer bonding; wide band gap semiconductors; Au thin film; GaAs-Au-SiC; finite element method; heat dissipation structure; heat sink; high-power semiconductor lasers; low-temperature Au-Au bonding; low-temperature GaAs-SiC wafer bonding; numerical simulation; semiconductor chip; solder layer; thermal conductivity; thermal resistance; thin Au interlayer; wafer-scale GaAs-Au-SiC heterostructure; Bonding; Gallium arsenide; Gold; Heat sinks; Surface emitting lasers; Thermal resistance; Au-Au bonding; OPSL; VECSEL; surface activated bonding; thermal management;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging (ICEP), 2014 International Conference on

Conference_Location

Toyama

Print_ISBN

978-4-904090-10-7

Type

conf

DOI

10.1109/ICEP.2014.6826773

Filename

6826773