Title :
On the correlation between drain-gate breakdown voltage and hot-electron reliability in InP HEMTs
Author :
Menozzi, R. ; Borgarino, M. ; van der Zanden, K. ; Schreurs, D.
Author_Institution :
Dipt. di Ingegneria dell´´Inf., Parma Univ., Italy
fDate :
4/1/1999 12:00:00 AM
Abstract :
By comparing devices with different recess widths, we show that the off-state drain-gate breakdown voltage (BV/sub DG/) may give totally misleading indications on the reliability of lattice-matched InP HEMTs under hot-electron (HE) and impact ionization conditions, from both standpoints of gradual and catastrophic degradation. Since the hot-electron degradation effects observed in our HEMTs are quite common, we believe that our results should be considered as a general caveat whenever indications on HE HEMT robustness are inferred from BV/sub DG/ measurements.
Keywords :
III-V semiconductors; high electron mobility transistors; hot carriers; impact ionisation; indium compounds; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device breakdown; semiconductor device reliability; HEMTs; III-V semiconductors; InP; catastrophic degradation; drain-gate breakdown voltage; gradual degradation; hot-electron reliability; impact ionization conditions; recess widths; robustness; Degradation; Gold; HEMTs; Impact ionization; Indium phosphide; MODFET circuits; Millimeter wave measurements; Robustness; Wet etching;
Journal_Title :
Electron Device Letters, IEEE
