Title :
High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
Author :
Sheppard, S.T. ; Doverspike, K. ; Pribble, W.L. ; Allen, S.T. ; Palmour, J.W. ; Kehias, L.T. ; Jenkins, T.J.
Author_Institution :
Cree Res. Inc., Durham, NC, USA
fDate :
4/1/1999 12:00:00 AM
Abstract :
Record performance of high-power GaN/Al/sub 0.14/-Ga/sub 0.86/N high-electron mobility transistors (HEMTs) fabricated on semi-insulating (SI) 4H-SiC substrates is reported. Devices of 0.125-0.25 mm gate periphery show high CW power densities between 5.3 and 6.9 W/mm, with a typical power-added efficiency (PAE) of 35.4% and an associated gain of 9.2 dB at 10 GHz. High-electron mobility transistors with 1.5-mm gate widths (12×125 μm), measured on-wafer, exhibit a total output power of 3.9 W CW (2.6 W/mm) at 10 GHz with a PAE of 29% and an associated gain of 10 dB at the -2 dB compression point. A 3-mm HEMT, packaged with a hybrid matching circuit, demonstrated 9.1 W CW at 7.4 GHz with a PAE of 29.6% and a gain of 7.1 dB. These data represent the highest power density, total power, and associated gain demonstrated for a III-nitride HEMT under RF drive.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave field effect transistors; microwave power transistors; power field effect transistors; 1.5 mm; 10 GHz; 10 dB; 29 percent; 29.6 percent; 3.9 W; 35.4 percent; 7.1 dB; 7.4 GHz; 9.1 W; 9.2 dB; CW power densities; GaN-AlGaN; III-V semiconductors; RF drive; gate periphery; hybrid matching circuit; microwave HEMTs; power density; power-added efficiency; semi-insulating substrates; total output power; total power; Aluminum gallium nitride; Gain measurement; Gallium nitride; HEMTs; MODFETs; Microwave devices; Packaging; Power generation; Power measurement; Silicon;
Journal_Title :
Electron Device Letters, IEEE
