Heteroepitaxy for GaAs on Nanopatterned Si (001)

Author

Hsu, Chao-Wei ; Chen, Yung-Feng ; Su, Yan-Kuin

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

24

Issue

12

fYear

2012

fDate

6/15/2012 12:00:00 AM

Firstpage

1009

Lastpage

1011

Abstract

An almost defect pit-free GaAs is achieved using nanopatterned Si (001). The largest nanopattern with an aspect ratio of 4.18 and the narrowest strip of around 55 nm in width are adopted in this letter. The threading dislocations, beginning from the GaAs-Si interface and moving along the facet plane to the sidewall, are interrupted within the initial epitaxial layer. With the aspect ratio increasing from 0.44 to 2.04, the etching defect pit density can be decreased from around 5.0 × 10⁹ cm^-2 to almost zero. The improvement in material quality is verified by transmission electron microscopy, photoluminescence, and X-ray diffraction studies.

Keywords

III-V semiconductors; MOCVD; X-ray diffraction; dislocations; elemental semiconductors; etching; gallium arsenide; nanopatterning; photoluminescence; semiconductor epitaxial layers; semiconductor growth; silicon; transmission electron microscopy; vapour phase epitaxial growth; GaAs-Si; X-ray diffraction; etching defect pit density; heteroepitaxy; nanopattern; photoluminescence; size 55 nm; threading dislocations; transmission electron microscopy; Epitaxial growth; Gallium arsenide; Silicon; Substrates; Tensile strain; X-ray scattering; GaAs; Si; high aspect ratio; nanopatterned;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2012.2192726

Filename

6179973