Author_Institution :
Berkeley Sensor & Acoust. Centre, California Univ., Berkeley, CA, USA
Abstract :
The etch rates for 317 combinations of 16 materials (single-crystal silicon, doped, and undoped polysilicon, several types of silicon dioxide, stoichiometric and silicon-rich silicon nitride, aluminum, tungsten, titanium, Ti/W alloy, and two brands of positive photoresist) used in the fabrication of microelectromechanical systems and integrated circuits in 28 wet, plasma, and plasmaless-gas-phase etches (several HF solutions, H3PO4, HNO3 +H2O+NH4F, KOH, Type A aluminum etchant, H 2O+H2O2+HF, H2O2, piranha, acetone, HF vapor, XeF2, and various combinations of SF6, CF4, CHF3, Cl2, O2 , N2, and He in plasmas) were measured and are tabulated. Etch preparation, use, and chemical reactions (from the technical literature) are given. Sample preparation and MEMS applications are described for the materials
Keywords :
etching; micromachining; micromechanical devices; sputter etching; surface cleaning; Al; H2O-H2O2-HF; H2O2; H3PO4; HF; HF solutions; HF vapor; HNO3-H2O-NH4F; KOH; MEMS applications; SF6; SF6-Cl2-O2-N2-He; Si; Si3N4; SiN; SiO2; Ti; Ti-W; Ti/W alloy; Type A aluminum etchant; W; XeF2; acetone; chemical reactions; etch preparation; etch rates; integrated circuits; microelectromechanical systems; micromachining processing; piranha; plasma etching; plasmaless-gas-phase etching; polysilicon; positive photoresist; sample preparation; single-crystal Si; tetrafluoromethane; trifluoromethane; wet etching; wet wafer cleaning; Aluminum; Hafnium; Micromachining; Plasma applications; Plasma materials processing; Plasma measurements; Silicon compounds; Titanium; Tungsten; Wet etching;
