Title :
Aluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices
Author :
Pu, Jing ; Chan, Daniel S H ; Kim, Sun-Jung ; Cho, Byung Jin
Author_Institution :
Nano Device Lab., Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
Aluminum-doped gadolinium oxides GdAlOx are proposed as a blocking oxide layer in charge-trap-type flash memory cell devices. Greatly improved operation speed and charge retention properties have been demonstrated, compared to conventional Al2O3 blocking layer. The optimization of Al percentage in GdAlOx, as well as charge loss mechanism in the memory cell device, has also been systematically studied.
Keywords :
flash memories; gadolinium compounds; optimisation; GdAlOx; aluminum-doped gadolinium oxides; blocking oxide layer; charge loss mechanism; charge retention; charge-trap-type flash memory cell devices; charge-trap-type nonvolatile memory devices; memory cell device; optimization; Aluminum oxide; Dielectric constant; Electrons; Flash memory; Flash memory cells; Helium; High-K gate dielectrics; Nonvolatile memory; Photonic band gap; SONOS devices; Silicon; $hbox{GdAlO}_{x}$ blocking layer; Flash memory; polysilicon–silicon oxide–silicon nitride–silicon oxide–silicon (SONOS); retention;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2009.2030834
