Aluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices

Author

Pu, Jing ; Chan, Daniel S H ; Kim, Sun-Jung ; Cho, Byung Jin

Author_Institution

Nano Device Lab., Nat. Univ. of Singapore, Singapore, Singapore

Volume

56

Issue

11

fYear

2009

Firstpage

2739

Lastpage

2745

Abstract

Aluminum-doped gadolinium oxides GdAlOx are proposed as a blocking oxide layer in charge-trap-type flash memory cell devices. Greatly improved operation speed and charge retention properties have been demonstrated, compared to conventional Al₂O₃ blocking layer. The optimization of Al percentage in GdAlOx, as well as charge loss mechanism in the memory cell device, has also been systematically studied.

Keywords

flash memories; gadolinium compounds; optimisation; GdAlO_x; aluminum-doped gadolinium oxides; blocking oxide layer; charge loss mechanism; charge retention; charge-trap-type flash memory cell devices; charge-trap-type nonvolatile memory devices; memory cell device; optimization; Aluminum oxide; Dielectric constant; Electrons; Flash memory; Flash memory cells; Helium; High-K gate dielectrics; Nonvolatile memory; Photonic band gap; SONOS devices; Silicon; $hbox{GdAlO}_{x}$ blocking layer; Flash memory; polysilicon–silicon oxide–silicon nitride–silicon oxide–silicon (SONOS); retention;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2009.2030834

Filename

5272473