• DocumentCode
    1489757
  • Title

    An improved PSpice model for the MOS-controlled thyristor

  • Author

    Arsov, Goce L. ; Panovski, Ljupco P.

  • Author_Institution
    Dept. of Electr. Eng., Methodius Univ., Skopje, Macedonia
  • Volume
    46
  • Issue
    2
  • fYear
    1999
  • fDate
    4/1/1999 12:00:00 AM
  • Firstpage
    473
  • Lastpage
    477
  • Abstract
    Improvements to the PSpice model for the MOS-controlled thyristor (MCT) (as discussed by Yuvarajan and Quek, 1995) are proposed. The improved MCT model is capable of simulating the breakover and breakdown characteristics of an MCT and working properly at high frequencies. The simulation results of various circuits show quite accurate behavior of the proposed model
  • Keywords
    MOS-controlled thyristors; SPICE; electric breakdown; semiconductor device models; MOS-controlled thyristor; PSpice model improvement; breakdown characteristics; breakover characteristics; simulation; Breakdown voltage; Circuit simulation; Electric breakdown; Equivalent circuits; Frequency; MOSFETs; Power semiconductor devices; SPICE; Switches; Thyristors;
  • fLanguage
    English
  • Journal_Title
    Industrial Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0046
  • Type

    jour

  • DOI
    10.1109/41.753789
  • Filename
    753789
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1489757