DocumentCode :
1489757
Title :
An improved PSpice model for the MOS-controlled thyristor
Author :
Arsov, Goce L. ; Panovski, Ljupco P.
Author_Institution :
Dept. of Electr. Eng., Methodius Univ., Skopje, Macedonia
Volume :
46
Issue :
2
fYear :
1999
fDate :
4/1/1999 12:00:00 AM
Firstpage :
473
Lastpage :
477
Abstract :
Improvements to the PSpice model for the MOS-controlled thyristor (MCT) (as discussed by Yuvarajan and Quek, 1995) are proposed. The improved MCT model is capable of simulating the breakover and breakdown characteristics of an MCT and working properly at high frequencies. The simulation results of various circuits show quite accurate behavior of the proposed model
Keywords :
MOS-controlled thyristors; SPICE; electric breakdown; semiconductor device models; MOS-controlled thyristor; PSpice model improvement; breakdown characteristics; breakover characteristics; simulation; Breakdown voltage; Circuit simulation; Electric breakdown; Equivalent circuits; Frequency; MOSFETs; Power semiconductor devices; SPICE; Switches; Thyristors;
fLanguage :
English
Journal_Title :
Industrial Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0046
Type :
jour
DOI :
10.1109/41.753789
Filename :
753789
Link To Document :
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