• DocumentCode
    1489810
  • Title

    Robust Parameter Extraction for the R3 Nonlinear Resistor Model for Diffused and Poly Resistors

  • Author

    McAndrew, Colin C. ; Bettinger, Tamara

  • Author_Institution
    Freescale Semiconductor, Inc., Tempe, AZ, USA
  • Volume
    25
  • Issue
    4
  • fYear
    2012
  • Firstpage
    555
  • Lastpage
    563
  • Abstract
    This paper presents robust algorithms to determine the parameters of the R3 nonlinear resistor model for both diffused and poly resistors. Extraction of many R3 parameters is simplified if it is based on the zero-bias conductance G_{0} , because G_{0} is not affected by velocity saturation or self-heating. We present techniques to reliably determine G_{0} , even when measured data are noisy or highly nonlinear, and show how to extract basic resistance parameters, temperature coefficients, and depletion pinching parameters using G_{0} . We describe how to determine thermal conductance parameters, and present a final parameter optimization strategy that prevents imprecision in modeling G_{0} from compromising the accuracy of fitting resistor nonlinearity.
  • Keywords
    Parameter extraction; Reliability; Resistors; SPICE; Semiconductor device modeling; Resistors; SPICE; semiconductor device modeling;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/TSM.2012.2194170
  • Filename
    6180012