DocumentCode
1489810
Title
Robust Parameter Extraction for the R3 Nonlinear Resistor Model for Diffused and Poly Resistors
Author
McAndrew, Colin C. ; Bettinger, Tamara
Author_Institution
Freescale Semiconductor, Inc., Tempe, AZ, USA
Volume
25
Issue
4
fYear
2012
Firstpage
555
Lastpage
563
Abstract
This paper presents robust algorithms to determine the parameters of the R3 nonlinear resistor model for both diffused and poly resistors. Extraction of many R3 parameters is simplified if it is based on the zero-bias conductance
, because
is not affected by velocity saturation or self-heating. We present techniques to reliably determine
, even when measured data are noisy or highly nonlinear, and show how to extract basic resistance parameters, temperature coefficients, and depletion pinching parameters using
. We describe how to determine thermal conductance parameters, and present a final parameter optimization strategy that prevents imprecision in modeling
from compromising the accuracy of fitting resistor nonlinearity.
Keywords
Parameter extraction; Reliability; Resistors; SPICE; Semiconductor device modeling; Resistors; SPICE; semiconductor device modeling;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/TSM.2012.2194170
Filename
6180012
Link To Document