Growth and Characterization of Long-Wavelength Infrared Type-II Superlattice Photodiodes on a 3-in GaSb Wafer

Author

Nguyen, Binh-Minh ; Chen, Guanxi ; Hoang, Minh-Anh ; Razeghi, Manijeh

Author_Institution

Center for Quantum Devices, Northwestern Univ., Evanston, IL, USA

Volume

47

Issue

5

fYear

2011

fDate

5/1/2011 12:00:00 AM

Firstpage

686

Lastpage

690

Abstract

We report the molecular beam epitaxial growth and characterization of high-performance Type-II superlattice photodiodes on a 3-in GaSb substrate for long-wavelength infrared detection. A 7.3-μm-thick device structure shows excellent structural homogeneity as demonstrated by atomic force microscopy and X-ray diffraction characterization. Optical and electrical measurements of the photodiodes reveal not only the uniformity of the Type-II superlattice material but also of the fabrication process. Across the wafer, at 77 K, photodiodes with a 50% cut-off wavelength of 11 μm exhibit more than 45% quantum efficiency and a dark current density of 1.0 × 10^-4 A/cm² at 50 mV, giving a specific detectivity of 6 × 10¹¹ cm Hz^1/2/W.

Keywords

III-V semiconductors; X-ray diffraction; atomic force microscopy; dark conductivity; focal planes; gallium compounds; infrared detectors; molecular beam epitaxial growth; photodiodes; semiconductor superlattices; GaSb; X-ray diffraction; atomic force microscopy; dark current density; infrared detection; long-wavelength infrared type-II superlattice photodiodes; molecular beam epitaxial growth; quantum efficiency; size 7.3 mum; temperature 77 K; voltage 50 mV; wavelength 11 mum; Optical imaging; Optical superlattices; Optical variables measurement; Photodiodes; Substrates; Long-wavelength infrared detectors and focal plane arrays; material uniformity; molecular beam epitaxy; type-II InAs/GaSb superlattices;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2010.2103049

Filename

5743092