Title :
A Study of Geometry Effects on the Performance of Ballistic Deflection Transistor
Author :
Kaushal, Vikas ; Iñiguez-de-la-Torre, Ignacio ; Irie, Hiroshi ; Guarino, Gregg ; Donaldson, William R. ; Ampadu, Paul ; Sobolewski, Roman ; Margala, Martin
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Massachusetts Lowell, Lowell, MA, USA
Abstract :
We present the results of an experimental study of dimensional ratios dependencies on the performance of a ballistic deflection transistor (BDT) operating in a quasi-ballistic regime. Experimental transconductance change based on geometry variations is studied for smaller and larger devices with channel width of 300 and 500 nm, respectively. Transconductance variation for a series of drain biases is also observed for a specific geometry and dimension. By means of Monte Carlo modeling we report the effect of different geometry parameters on the transfer characteristics of BDTs. The strength of the gate control in the InGaAs channel is analyzed.
Keywords :
III-V semiconductors; Monte Carlo methods; ballistic transport; field effect transistors; gallium arsenide; indium compounds; semiconductor device models; InGaAs; InGaAs channel; Monte Carlo modeling; ballistic deflection transistor; dimensional ratios dependencies; drain biases; gate control; geometry variations; transconductance change; transfer characteristics; Ballistic transport; CMOS technology; Electrons; Geometry; III-V semiconductor materials; Monte Carlo methods; Permission; Solid modeling; Temperature; Transconductance; Experimental measurements; Monte Carlo (MC) modeling; nanotechnology; surface charge; transconductance;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2010.2050069
