DocumentCode
1490217
Title
Numerical Simulation of Single-Junction In 
Ga P Solar Cell With Compositional Gra
Author
Kuo, Yen-Kuang ; Lin, Bing-Cheng ; Chang, Jih-Yuan ; Chang, Yi-An
Author_Institution
Dept. of Phys., Nat. Changhua Univ. of Educ., Changhua, Taiwan
Volume
23
Issue
12
fYear
2011
fDate
6/15/2011 12:00:00 AM
Firstpage
822
Lastpage
824
Abstract
A compositional grading layer between the p-In0.5Ga0.5P emitter layer and p-In0.5Al0.5P window layer in the p+-n In0.5Ga0.5P solar cell is investigated numerically. With the insertion of the grading layer, the short-circuit current density and conversion efficiency are improved due to the enhancement of carrier-collection efficiency, which can be ascribed to the reduction of potential barrier height in the valance band and the existence of internal quasi-electric field in the conduction band. An optimized value of conversion efficiency can be obtained by appropriately adjusting the thickness of the grading layer.
Keywords
conduction bands; current density; gallium compounds; indium compounds; numerical analysis; p-n heterojunctions; solar cells; In0.5Al0.5P window layer; In0.5Ga0.5P; carrier-collection efficiency enhancement; compositional grading configuration; compositional grading layer; conduction band; conversion efficiency; grading layer thickness; internal quasielectric field; numerical simulation; p-In0.5Ga0.5P emitter layer; p+-n In0.5Ga0.5P solar cell; potential barrier height reduction; short-circuit current density; single-junction In0.5Ga0.5P solar cell; valance band; Data models; Electric fields; Electric potential; Mathematical model; Photonic band gap; Photovoltaic cells; Grading layer; InGaP; numerical simulation; solar cell;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2011.2140100
Filename
5744095
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