DocumentCode :
1490217
Title :
Numerical Simulation of Single-Junction In 
Ga P Solar Cell With Compositional Gra
Author :
Kuo, Yen-Kuang ; Lin, Bing-Cheng ; Chang, Jih-Yuan ; Chang, Yi-An
Author_Institution :
Dept. of Phys., Nat. Changhua Univ. of Educ., Changhua, Taiwan
Volume :
23
Issue :
12
fYear :
2011
fDate :
6/15/2011 12:00:00 AM
Firstpage :
822
Lastpage :
824
Abstract :
A compositional grading layer between the p-In0.5Ga0.5P emitter layer and p-In0.5Al0.5P window layer in the p+-n In0.5Ga0.5P solar cell is investigated numerically. With the insertion of the grading layer, the short-circuit current density and conversion efficiency are improved due to the enhancement of carrier-collection efficiency, which can be ascribed to the reduction of potential barrier height in the valance band and the existence of internal quasi-electric field in the conduction band. An optimized value of conversion efficiency can be obtained by appropriately adjusting the thickness of the grading layer.
Keywords :
conduction bands; current density; gallium compounds; indium compounds; numerical analysis; p-n heterojunctions; solar cells; In0.5Al0.5P window layer; In0.5Ga0.5P; carrier-collection efficiency enhancement; compositional grading configuration; compositional grading layer; conduction band; conversion efficiency; grading layer thickness; internal quasielectric field; numerical simulation; p-In0.5Ga0.5P emitter layer; p+-n In0.5Ga0.5P solar cell; potential barrier height reduction; short-circuit current density; single-junction In0.5Ga0.5P solar cell; valance band; Data models; Electric fields; Electric potential; Mathematical model; Photonic band gap; Photovoltaic cells; Grading layer; InGaP; numerical simulation; solar cell;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2011.2140100
Filename :
5744095
Link To Document :
