Title :
4H-SiC Nano-Pillar Avalanche Photodiode With Illumination-Dependent Characteristics
Author :
Hong, Rongdun ; Zhou, Yi ; Wang, Kang Long ; Wu, Zhengyun
Author_Institution :
Phys. & Mech. & Electracal Eng., Xiamen Univ., Xiamen, China
fDate :
6/15/2011 12:00:00 AM
Abstract :
A 4H-SiC nano-pillar-based avalanche photodiode (NAPD) with a separate absorption region and a multiplication region is proposed and its optoelectronic performance is modeled. By properly designing the device geometry and the doping concentration of each layer, the avalanche breakdown voltage (Vbr) of the NAPD is found to be dependent of the incident wavelength and power density, which are explained by the band diagrams of 4H-SiC NAPDs.
Keywords :
avalanche photodiodes; light absorption; nanophotonics; optical design techniques; optoelectronic devices; semiconductor device breakdown; semiconductor device models; silicon compounds; wide band gap semiconductors; absorption region; avalanche breakdown voltage; illumination-dependent characteristics; multiplication region; nano-pillar avalanche photodiode; optoelectronic; Absorption; Electric fields; Junctions; Lighting; Materials; Semiconductor process modeling; Silicon carbide; 4H-SiC; Avalanche; nano-pillar; photodiode;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2011.2140391
