Title :
Improved CMOS field isolation using germanium/boron implantation
Author :
Pfiester, James R. ; Alvis, John R.
Author_Institution :
Motorola Inc., Austin, TX, USA
Abstract :
A novel germanium/boron implantation technique for improving the electrical field isolation of high-density CMOS circuits is demonstrated. Germanium implantation causes a reduction in dopant diffusion and segregation during field oxidation and is shown to increase the p-well field threshold voltage by as much as 40% with no significant degradation to junction or device performance. Selective germanium implantation with a blanket boron field implant can also improve the electrical field isolation behavior for CMOS circuits.<>
Keywords :
CMOS integrated circuits; ion implantation; B; CMOS field isolation; Ge; dopant diffusion; electrical field isolation; field oxidation; high-density CMOS; ion implantation; p-well field threshold voltage; segregation; Boron; Circuits; Degradation; Fabrication; Germanium; Implants; MOS devices; Oxidation; Silicon; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
