DocumentCode :
1490480
Title :
Molecular dynamics simulations of plasma crystal formation including wake effects
Author :
Hammerberg, James E. ; Lemons, D.S. ; Murillo, Michael S. ; Winske, Dan
Author_Institution :
Los Alamos Nat. Lab., NM, USA
Volume :
29
Issue :
2
fYear :
2001
fDate :
4/1/2001 12:00:00 AM
Firstpage :
247
Lastpage :
255
Abstract :
Molecular dynamics (MD) simulations are used to study dusty plasma crystal formation in three dimensions. The grain interaction model includes a spherically symmetric Debye-Huckel potential, an asymmetric wake potential, and a unidirectional external potential representing gravity and the sheath potential. We use a new form for the wake with ion-neutral collisions that reduce the interaction length of the wake. For the parameters considered, we obtain quasi-ordered structures in which the grains align into well-formed strings in the vertical direction and a more amorphous alignment of the strings themselves. Changes in the vertical alignment as a function of the wake parameters are analyzed
Keywords :
dusty plasmas; molecular dynamics method; plasma collision processes; plasma flow; plasma sheaths; plasma simulation; amorphous alignment; asymmetric wake potential; crystallisation; dusty plasma crystal formation; grain alignment; grain interaction model; gravity; ion-neutral collisions; molecular dynamics simulations; plasma crystal formation; quasi-ordered structures; sheath potential; spherically symmetric Debye-Huckel potential; strongly coupled plasma; three dimensional process; unidirectional external potential; vertical alignment; vertical direction; wake effects; wake interaction length; wake parameters; well-formed strings; Amorphous materials; Crystallization; Dusty plasma; Electrodes; Gravity; Numerical simulation; Plasma measurements; Plasma sheaths; Plasma simulation; Plasma temperature;
fLanguage :
English
Journal_Title :
Plasma Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-3813
Type :
jour
DOI :
10.1109/27.923702
Filename :
923702
Link To Document :
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