• DocumentCode
    1490536
  • Title

    Low-Power Very Low-Noise Cryogenic SiGe IF Amplifiers for Terahertz Mixer Receivers

  • Author

    Russell, Damon ; Weinreb, Sander

  • Author_Institution
    Dept. of Electr. Eng., Californian Inst. of Technol., Pasadena, CA, USA
  • Volume
    60
  • Issue
    6
  • fYear
    2012
  • fDate
    6/1/2012 12:00:00 AM
  • Firstpage
    1641
  • Lastpage
    1648
  • Abstract
    State-of-the-art radio astronomy terahertz receivers utilize clusters of super-conducting mixers with cryogenic IF amplifiers. The critical parameters of the IF amplifiers are noise temperature, bandwidth, power consumption, input return loss, and physical size. This paper presents test data on three approaches to the IF amplifier; two are silicon-germanium (SiGe) monolithic microwave integrated circuit designs and the third is a discrete SiGe transistor miniature module. The amplifiers provide noise temperatures in the range of 5-15 K, from 1 to 6 GHz, at power consumptions as low as 2 mW.
  • Keywords
    Ge-Si alloys; MMIC amplifiers; MMIC mixers; cryogenics; low noise amplifiers; low-power electronics; submillimetre wave amplifiers; submillimetre wave mixers; submillimetre wave receivers; SiGe; frequency 1 GHz to 6 GHz; input return loss; low power very low noise cryogenic IF amplifiers; monolithic microwave integrated circuit designs; power 2 W; power consumption; radio astronomy terahertz receivers; superconducting mixers; temperature 5 K to 15 K; terahertz mixer receivers; transistor miniature module; Cryogenics; MMICs; Mixers; Noise; Noise measurement; Silicon germanium; Cryogenics; low-noise amplifier (LNA); low-power electronics; monolithic microwave integrated circuits (MMICs); radio astronomy; silicon–germanium (SiGe);
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2012.2190744
  • Filename
    6180195