DocumentCode
1490536
Title
Low-Power Very Low-Noise Cryogenic SiGe IF Amplifiers for Terahertz Mixer Receivers
Author
Russell, Damon ; Weinreb, Sander
Author_Institution
Dept. of Electr. Eng., Californian Inst. of Technol., Pasadena, CA, USA
Volume
60
Issue
6
fYear
2012
fDate
6/1/2012 12:00:00 AM
Firstpage
1641
Lastpage
1648
Abstract
State-of-the-art radio astronomy terahertz receivers utilize clusters of super-conducting mixers with cryogenic IF amplifiers. The critical parameters of the IF amplifiers are noise temperature, bandwidth, power consumption, input return loss, and physical size. This paper presents test data on three approaches to the IF amplifier; two are silicon-germanium (SiGe) monolithic microwave integrated circuit designs and the third is a discrete SiGe transistor miniature module. The amplifiers provide noise temperatures in the range of 5-15 K, from 1 to 6 GHz, at power consumptions as low as 2 mW.
Keywords
Ge-Si alloys; MMIC amplifiers; MMIC mixers; cryogenics; low noise amplifiers; low-power electronics; submillimetre wave amplifiers; submillimetre wave mixers; submillimetre wave receivers; SiGe; frequency 1 GHz to 6 GHz; input return loss; low power very low noise cryogenic IF amplifiers; monolithic microwave integrated circuit designs; power 2 W; power consumption; radio astronomy terahertz receivers; superconducting mixers; temperature 5 K to 15 K; terahertz mixer receivers; transistor miniature module; Cryogenics; MMICs; Mixers; Noise; Noise measurement; Silicon germanium; Cryogenics; low-noise amplifier (LNA); low-power electronics; monolithic microwave integrated circuits (MMICs); radio astronomy; silicon–germanium (SiGe);
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2012.2190744
Filename
6180195
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