Title :
Surface Leakage in GaN/InGaN Double Heterojunction Bipolar Transistors
Author :
Shen, Shyh-Chiang ; Lee, Yi-Che ; Kim, Hee-Jin ; Zhang, Yun ; Choi, Suk ; Dupuis, Russell D. ; Ryou, Jae-Hyun
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
We report a study on the surface-leakage current in GaN/InGaN double heterojunction bipolar transistors (DHBTs) that are grown on a sapphire substrate. Surface-leakage-current densities on an unpassivated DHBT are 9.6 times 10-5 - 5.8 times 10-4 A/cm for JC = 0.5-50 A/cm2. A fabricated n-p-n GaN/InGaN DHBT shows the common-emitter dc current gain of 42, the collector-current density of 5.2 kA/cm2, and the common-emitter breakdown voltage (BVCEO) of 75 V.
Keywords :
III-V semiconductors; current density; electric breakdown; gallium compounds; heterojunction bipolar transistors; indium compounds; leakage currents; sapphire; wide band gap semiconductors; Al2O3; GaN-InGaN; collector current density; common emitter breakdown voltage; double heterojunction bipolar transistors; n-p-n DHBT; sapphire substrate; surface leakage current; voltage 75 V; GaN/InGaN; graded emitter; heterojunction bipolar transistors (HBTs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2030373
