• DocumentCode
    1491052
  • Title

    Solder Pump Technology for Through-Silicon via Fabrication

  • Author

    Gu, Jiebin ; Pike, W.T. ; Karl, W.J.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Imperial Coll. London, London, UK
  • Volume
    20
  • Issue
    3
  • fYear
    2011
  • fDate
    6/1/2011 12:00:00 AM
  • Firstpage
    561
  • Lastpage
    563
  • Abstract
    We present a solder pump method that injects conductive material into a device wafer to form low-resistance through-silicon vias (TSVs). Building on previous work that exploits the Gibbs-Thomson effect, this pump geometry uses a reusable wafer set to produce a pattern of U-shaped reservoirs into which solder balls are loaded. After introduction of the device wafer with a corresponding pattern of through-wafer-etched holes, reflow results in the complete transfer of the solder from the reservoirs into the device structure to produce the vias. This approach forms the basis of a rapid low-cost batch-fabrication process for TSVs.
  • Keywords
    conducting materials; electric resistance; etching; semiconductor device packaging; solders; three-dimensional integrated circuits; Gibbs-Thomson effect; U-shaped reservoir; conductive material; device structure; device wafer; low-cost batch-fabrication process; low-resistance through-silicon vias; pump geometry; reusable wafer set; semiconductor device packaging; solder ball; solder pump technology; through-silicon via fabrication; through-wafer-etched hole; Fabrication; Feeds; Geometry; Reservoirs; Silicon; Surface tension; Through-silicon vias; Microelectromechanical devices; semiconductor device packaging; through-silicon via (TSV);
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/JMEMS.2011.2127460
  • Filename
    5746490