InAs/GaInAs quantum dot DFB lasers emitting at 1.3 μm

Author

Klopf, F. ; Krebs, R. ; Wolf, A. ; Emmerling, M. ; Reithmaier, J.P. ; Forchel, A.

Author_Institution

Dept. of Technische Phys., Wurzburg Univ., Germany

Volume

37

Issue

10

fYear

2001

fDate

5/10/2001 12:00:00 AM

Firstpage

634

Lastpage

636

Abstract

Singlemode operation of 1.3 μm InAs/GaInAs quantum dot lasers has been achieved using the concept of complex coupled distributed feedback. Mode selection was realised by laterally patterned metal gratings. At room temperature the lasers show stable singlemode emission with sidemode suppression ratios of up to 55 dB, threshold currents as low as 17 mA and output powers of up to 8 mW under continuous wave operation

Keywords

III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; laser beams; laser feedback; laser modes; optical fabrication; optical fibre communication; optical transmitters; quantum well lasers; ridge waveguides; semiconductor quantum dots; waveguide lasers; 1.3 mum; 17 mA; 298 K; 8 mW; InAs-GaInAs; InAs/GaInAs; complex coupled distributed feedback; continuous wave operation; laterally patterned metal gratings; mode selection; output powers; quantum dot DFB lasers; room temperature; sidemode suppression ratios; singlemode operation; stable singlemode emission; threshold currents;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20010420

Filename

923979