Evaluation of the performance of TaN diffusion barrier against copper diffusion using SIMS and AFM

Author

Teh, W.H. ; Koh, L.T. ; Chen, S.M. ; Xie, J. ; Li, C.Y. ; Foo, P.D.

Author_Institution

Nat. Univ. of Singapore, Singapore

Volume

37

Issue

10

fYear

2001

fDate

5/10/2001 12:00:00 AM

Firstpage

660

Lastpage

661

Abstract

The reliability of a multilayer ionised metal plasma (IMP) Cu/IMP TaN plasma enhanced chemical vapour deposited SiO₂/Si film structure with different thickness of TaN (10-30 nm) is studied. AFM pictures of the surface morphology show roughening after annealing, indicating possible grain growth. SIMS shows abrupt broadening of the mixed regions at 600°C for the 10 nm thick TaN barrier and at 800°C for the 30 nm thick TaN barrier

Keywords

atomic force microscopy; chemical interdiffusion; copper; diffusion barriers; grain growth; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; rough surfaces; secondary ion mass spectra; surface topography; tantalum compounds; 10 to 30 nm; 600 to 800 C; AFM; Cu diffusion; Cu-TaN-SiO₂-Si; PECVD SiO₂/Si film structure; SIMS; TaN diffusion barrier; grain growth; ionised metal plasma Cu; ionised metal plasma TaN; multilayer structure; plasma enhanced CVD SiO₂; reliability; roughening; surface morphology;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20010390

Filename

923997