DocumentCode :
1491868
Title :
Abatement of perfluorocompounds (PFCs) in a microwave tubular reactor using O2 as an additive gas
Author :
Mohindra, Vivek ; Chae, Heeyeop ; Sawin, Herbert H. ; Mocella, Michael T.
Author_Institution :
Dept. of Chem. Eng., MIT, Cambridge, MA, USA
Volume :
10
Issue :
3
fYear :
1997
fDate :
8/1/1997 12:00:00 AM
Firstpage :
399
Lastpage :
411
Abstract :
This paper discusses the abatement of four perfluorocompounds (PFCs) in a microwave tubular reactor-C2F6, CF4, SF6, and CHF3. The abatement was carried out using O2 as an additive gas, and was studied as a function of O2:PPC ratio, flow rate, power and pressure. Near 100% abatement was achieved for all the PFCs investigated. A detailed characterization of C2F6 abatement using GC, GC/MS, and inline Mass Spectrometer showed the major abatement products to be CO2, COF2, and F2. The parameteric dependence of CF4, SF6, and CHF3 abatement was also characterized experimentally, the major products from CF4 abatement were similar to those from C2F6 abatement. Mass Spectroscopy indicated the main products for SF6 abatement were SO2F2 , SO2, and F2 while those for CHF3 were CO2, COF2, F2, and HF. Additional experiments indicate that the microwave abatement unit can be successfully used to abate these PFC´s in the Integrated Circuit fabrication facilities
Keywords :
VLSI; environmental factors; integrated circuit manufacture; mass spectroscopic chemical analysis; organic compounds; production testing; CO2; F2; O2; SF6; SO2; SO2F2; VLSI fabrication; additive gas; environmental considerations; flow rate; hexafluoroethane; inline mass spectrometer; integrated circuit fabrication facilities; microwave abatement unit; microwave tubular reactor; perfluorocompound abatement; tetrafluoromethane; trifluoromethane; Chemical engineering; Electromagnetic heating; Electronics industry; Etching; Fabrication; Gases; Global warming; Inductors; Mass spectroscopy; Plasma applications;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.618213
Filename :
618213
Link To Document :
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