Demonstration of (/spl lambda//spl ap/11.5-μm) GaAs-based quantum cascade laser operating on a Peltier cooled element

Author

Page, H. ; Robertson, A. ; Sirtori, C. ; Becker, C. ; Glastre, G. ; Nagle, J.

Author_Institution

Lab. Central de Recherches, Thomson-CSF, Orsay, France

Volume

13

Issue

6

fYear

2001

fDate

6/1/2001 12:00:00 AM

Firstpage

556

Lastpage

558

Abstract

We demonstrate an average power of 2 mW at /spl lambda//spl ap/11.5 μm and 233 K, for a GaAs-based quantum cascade laser mounted on a Peltier cooler. Furthermore, a maximum operating temperature of 285 K has also been demonstrated. These results are attributed to the excellent intrinsic thermal characteristics of these lasers and good heat management, achieved through the structural design and epi-side down mounting. Measurements show a thermal resistance of 6.7 K/W at 233 K, in good-agreement with our models.

Keywords

III-V semiconductors; Peltier effect; current density; gallium arsenide; laser beams; laser variables measurement; quantum well lasers; thermal resistance; 11.5 mum; 2 mW; 233 K; 285 K; GaAs; GaAs-based quantum cascade laser; Peltier cooled element; average power; epi-side down mounting; heat management; intrinsic thermal characteristics; maximum operating temperature; quantum cascade laser; structural design; Laser modes; Optical design; Pulsed laser deposition; Quantum cascade lasers; Semiconductor lasers; Temperature; Thermal management; Thermal resistance; Thermoelectric devices; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.924018

Filename

924018