InP-InGaAsP wafer-bonded vertically coupled X-crossing multiple channel optical add-drop multiplexer

Author

Raburn, Maura ; Liu, Bin ; Okuno, Yae ; Bowers, John E.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

13

Issue

6

fYear

2001

fDate

6/1/2001 12:00:00 AM

Firstpage

579

Lastpage

581

Abstract

A vertically coupled InP-InGaAsP crossed waveguide optical add-drop multiplexer has been realized through the use of wafer bonding. Designed for signals in the 1550-nm range, this novel device requires only a single epitaxial growth and illustrates the use of vertical optical interconnects for the three dimensional routing of optical signals. To our knowledge, it is also one of the first optical vertically coupled devices with no horizontally coupled counterpart.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; multiplexing equipment; optical communication equipment; optical directional couplers; optical interconnections; telecommunication network routing; wafer bonding; wavelength division multiplexing; 1550 nm; InP-InGaAsP; InP-InGaAsP wafer-bonded vertically coupled X-crossing multiple channel optical add-drop multiplexer; epitaxial growth; optical signals; optical vertically coupled devices; three dimensional routing; vertical optical interconnects; vertically coupled InP-InGaAsP crossed waveguide optical add-drop multiplexer; Epitaxial growth; Optical add-drop multiplexers; Optical coupling; Optical design; Optical devices; Optical interconnections; Optical waveguides; Routing; Signal design; Wafer bonding;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.924026

Filename

924026