Title :
InP-InGaAsP wafer-bonded vertically coupled X-crossing multiple channel optical add-drop multiplexer
Author :
Raburn, Maura ; Liu, Bin ; Okuno, Yae ; Bowers, John E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
6/1/2001 12:00:00 AM
Abstract :
A vertically coupled InP-InGaAsP crossed waveguide optical add-drop multiplexer has been realized through the use of wafer bonding. Designed for signals in the 1550-nm range, this novel device requires only a single epitaxial growth and illustrates the use of vertical optical interconnects for the three dimensional routing of optical signals. To our knowledge, it is also one of the first optical vertically coupled devices with no horizontally coupled counterpart.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; multiplexing equipment; optical communication equipment; optical directional couplers; optical interconnections; telecommunication network routing; wafer bonding; wavelength division multiplexing; 1550 nm; InP-InGaAsP; InP-InGaAsP wafer-bonded vertically coupled X-crossing multiple channel optical add-drop multiplexer; epitaxial growth; optical signals; optical vertically coupled devices; three dimensional routing; vertical optical interconnects; vertically coupled InP-InGaAsP crossed waveguide optical add-drop multiplexer; Epitaxial growth; Optical add-drop multiplexers; Optical coupling; Optical design; Optical devices; Optical interconnections; Optical waveguides; Routing; Signal design; Wafer bonding;
Journal_Title :
Photonics Technology Letters, IEEE
