High efficiency CMOS power amplifier for 3 to 5 GHz ultra-wideband (UWB) application

Author

Wong, Sew-Kin ; Maisurah, Siti ; Osman, Mohd Nizam ; Kung, Fabian ; See, Jin-hui

Author_Institution

Fac. of Eng., Multimedia Univ., Cyberjaya, Malaysia

Volume

55

Issue

3

fYear

2009

fDate

8/1/2009 12:00:00 AM

Firstpage

1546

Lastpage

1550

Abstract

A two-stage 0.18 mum CMOS power amplifier (PA) for ultra-wideband (UWB) 3 to 5 GHz using common source inductive degeneration is presented in this paper. Onwafer measurement shows an average power gain of 15.2 dB with gain flatness of 0.6 dB and an input 1 dB compression (P_1dB) above - 6.1 dBm from 3 to 5 GHz while consuming 25 mW from a 1.8 V supply. Load-pull measurement also shows a power added efficiency (PAE) of 34% at 4 GHz with 50 Omega load impedance. Results obtained in this work could be used as a reference design for immediate PA implementation in commercial mobile or portable UWB transmitter or signal generator.

Keywords

CMOS analogue integrated circuits; microwave integrated circuits; microwave power amplifiers; ultra wideband communication; UWB transmitter; frequency 3 GHz to 5 GHz; high efficiency CMOS power amplifier; load-pull measurement; power 25 mW; power added efficiency; signal generator; ultra-wideband application; voltage 1.8 V; Broadband amplifiers; Circuit topology; Frequency; High power amplifiers; Power amplifiers; Power generation; Power measurement; RLC circuits; Transmitters; Ultra wideband technology; Power amplifier (PA); UWB CMOS PA; Ultra-Wideband (UWB);

fLanguage

English

Journal_Title

Consumer Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0098-3063

Type

jour

DOI

10.1109/TCE.2009.5278025

Filename

5278025