High-speed integrated optoelectronic modulation circuit

Author

Yap, Daniel ; Elliott, Kenneth R. ; Brown, Young K. ; Kost, Alan R. ; Ponti, Elmira S.

Author_Institution

HRL Labs., Malibu, CA, USA

Volume

13

Issue

6

fYear

2001

fDate

6/1/2001 12:00:00 AM

Firstpage

626

Lastpage

628

Abstract

A chip-level integrated optoelectronic modulation circuit is described for high-speed digital interconnects. This circuit is composed of an electroabsorption modulator with surface-normal operation at 1550-nm wavelengths and a high-speed electronic driver. A growth/etch/regrowth procedure is used to fabricate the multiple-quantum well modulators and the heterojunction bipolar transistors (HBTs) of the circuit on a common InP substrate. The measured bandwidth is approximately 30 GHz.

Keywords

bipolar digital integrated circuits; electro-optical modulation; electroabsorption; high-speed integrated circuits; integrated circuit interconnections; integrated optoelectronics; modulators; optical communication equipment; quantum well devices; 1550 nm; 30 GHz; HBT; InP; InP substrate; bandwidth; chip-level integrated optoelectronic modulation circuit; electroabsorption modulator; growth/etch/regrowth procedure; heterojunction bipolar transistors; high-speed digital interconnects; high-speed electronic driver; high-speed integrated optoelectronic modulation circuit; multiple-quantum well modulators; surface-normal operation; Digital modulation; Driver circuits; Etching; Heterojunction bipolar transistors; High speed integrated circuits; High-speed electronics; Indium phosphide; Integrated circuit interconnections; Integrated optoelectronics; Surface waves;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.924047

Filename

924047