Three-Dimensional Analysis of Temperature Distributions Based on Circuit Modeling of Light-Emitting Diodes

Author

Yun, Joosun ; Han, Dong-Pyo ; Shim, Jong-In ; Shin, Dong-Soo

Author_Institution

Dept. of Electron. & Commun. Eng., Hanyang Univ., Ansan, South Korea

Volume

59

Issue

6

fYear

2012

fDate

6/1/2012 12:00:00 AM

Firstpage

1799

Lastpage

1802

Abstract

Thermal circuit modeling is successfully established and utilized for analyzing the temperature distribution within each epitaxial film of InGaN/GaN multiple-quantum-well blue light-emitting diodes (LEDs). The temperature distribution based on the infrared (IR) intensity from the LED surface is also calculated by applying the known emissivity and transmittance values for each epitaxial material to the simulated results. We measure the temperature distribution by using an IR camera on the LED surface and demonstrate that the simulated and measured temperature distributions have very similar distribution tendencies.

Keywords

III-V semiconductors; cameras; gallium compounds; indium compounds; infrared imaging; light emitting diodes; quantum well devices; temperature distribution; temperature measurement; wide band gap semiconductors; IR camera; IR intensity; InGaN-GaN; LED surface calculation; emissivity value; epitaxial film; epitaxial material; infrared intensity; multiple-quantum-well blue LED; multiple-quantum-well blue light-emitting diode; temperature distribution measurement analysis; thermal circuit modeling; three-dimensional analysis; transmittance value; Analytical models; Heating; Indium tin oxide; Integrated circuit modeling; Light emitting diodes; Materials; Temperature distribution; Circuit modeling; light-emitting diodes (LEDs); temperature distribution;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2189571

Filename

6182583