Title :
Pulsed microwave characterization of an SiGe heterojunction bipolar transistor
Author :
Wartenberg, Scott A. ; Westgate, Charles R.
Author_Institution :
Hewlett-Packard Co., Newark, CA, USA
fDate :
4/1/1999 12:00:00 AM
Abstract :
This paper presents the first pulsed characterization of a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT). Comparison is made of the SiGe HBT´s performance to that of a Si bipolar junction transistor fabricated using the same mask set. Measurements made over a 400-μs pulse show how device self-heating dramatically affects the microwave-frequency response of the devices. Using pulse-profiled S-parameters to find the intrinsic base resistance rπ and base-collector capacitance Cjc, plots reveal how these two elements significantly vary over the length of the pulse. The results emphasize the need for accurate characterization of microwave Si-based devices in pulsed applications
Keywords :
Ge-Si alloys; S-parameters; frequency response; heterojunction bipolar transistors; microwave bipolar transistors; microwave measurement; semiconductor device measurement; semiconductor materials; 400 mus; SiGe; base-collector capacitance; device self-heating; heterojunction bipolar transistor; intrinsic base resistance; mask set; microwave-frequency response; pulse-profiled S-parameters; pulsed microwave characterization; Capacitance; Electrical resistance measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave devices; Microwave measurements; Microwave transistors; Pulse measurements; Scattering parameters; Silicon germanium;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
