Improved Performance of an InGaN-Based Light-Emitting Diode With a p-GaN/n-GaN Barrier Junction

Author

Liu, Yi-Jung ; Huang, Chien-Chang ; Chen, Tai-You ; Hsu, Chi-Shiang ; Liou, Jian-Kai ; Liu, Wen-Chau

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

47

Issue

6

fYear

2011

fDate

6/1/2011 12:00:00 AM

Firstpage

755

Lastpage

761

Abstract

An InGaN-based light-emitting diode with a p-GaN/n-GaN barrier junction is fabricated and investigated. Due to the built-in potential induced by this junction, superior current spreading performance is achieved. In addition, the suppression of the current-crowding phenomenon yields a reduced parasitic effect. Therefore, under an injection current of 20 mA, improved behaviors, including lower turn-on voltage, lower parasitic series resistance, and reduced p-n junction temperature, are achieved. In addition, due to the improved current-spreading ability, longer life-time, driving at medium current injection (60 mA), as well as significantly enhanced electrostatic discharge performance, are obtained.

Keywords

III-V semiconductors; electrostatic discharge; gallium compounds; indium compounds; light emitting diodes; p-n junctions; wide band gap semiconductors; InGaN; current 20 mA; current 60 mA; current spreading; current-crowding; electrostatic discharge; light emitting diode; medium current injection; p-GaN/n-GaN barrier junction; p-n junction temperature; parasitic series resistance; Electrostatic discharge; Gallium nitride; Junctions; Light emitting diodes; Performance evaluation; Power generation; Quantum well devices; Current spreading; GaN; junction temperature; light-emitting diode;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2011.2114330

Filename

5746819