DocumentCode
1492385
Title
Accurate modeling for drain breakdown current of GaAs MESFET´s
Author
Fujii, Kohei ; Hara, Yasuhiko ; Yakabe, Toshiyuki ; Yabe, Hatsuo
Author_Institution
Japan Radio Co. Ltd., Tokyo, Japan
Volume
47
Issue
4
fYear
1999
fDate
4/1/1999 12:00:00 AM
Firstpage
516
Lastpage
518
Abstract
Extensive measurements of a drain breakdown current as a function of device bias are reported in this paper. To represent the measured drain breakdown currents accurately, a new modeling function and an equivalent circuit controlled by two voltages are proposed. This model, when integrated into a large-signal analysis program, improves the accuracy of the simulation
Keywords
III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; microwave field effect transistors; semiconductor device models; GaAs; III-V semiconductors; MESFET; device bias; drain breakdown current; equivalent circuit; large-signal analysis program; modeling function; Analytical models; Breakdown voltage; Circuit simulation; Current measurement; Electric breakdown; Equivalent circuits; Gallium arsenide; Integrated circuit measurements; MESFETs; Voltage control;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.754888
Filename
754888
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