DocumentCode :
1492600
Title :
Capacitance of thin-film ferroelectrics under different drive signals
Author :
Li, Huadong ; Subramanyam, Guru
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Dayton, Dayton, OH, USA
Volume :
56
Issue :
9
fYear :
2009
fDate :
9/1/2009 12:00:00 AM
Firstpage :
1861
Lastpage :
1867
Abstract :
Thin-film ferroelectric capacitance can be obtained by 2 different methods. Capacitance obtained using the derivative of its hysteresis loop is related to large applied signals and can be called the large-signal capacitance. Capacitance measured directly with a small, applied ac signal together with a slow changing dc bias is called the small-signal capacitance. This paper investigated the voltage dependence of the large- and small-signal capacitances. Measurements show that the large-signal C-V curve of thin-film ferroelectrics has much sharper peaks and higher peak values than the small-signal C-V curve. Analyses based on the Landau-Khalatnikov model shows that practical small-signal capacitance is closer to the ideal capacitance. However, its C-V curve has clearance areas around the coercive voltage, and the polarization switching is not reflected in the small-signal capacitance. This causes the peaks of small-signal C-V curves to be lower than that of large-signal C-V curves.
Keywords :
capacitance; dielectric hysteresis; dielectric polarisation; ferroelectric coercive field; ferroelectric switching; ferroelectric thin films; Landau-Khalatnikov model; coercive voltage; hysteresis loop; polarization switching; thin-film ferroelectric capacitance; voltage dependence; Capacitance measurement; Capacitance-voltage characteristics; Ferroelectric materials; Hysteresis; Polarization; Transistors; Voltage;
fLanguage :
English
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-3010
Type :
jour
DOI :
10.1109/TUFFC.2009.1262
Filename :
5278436
Link To Document :
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