DocumentCode :
1493029
Title :
Silicon-Chip-Based Real-Time Dispersion Monitoring for 640 Gbit/s DPSK Signals
Author :
Vo, Trung D. ; Corcoran, Bill ; Schröder, Jochen ; Pelusi, Mark D. ; Xu, Dan-Xia ; Densmore, Adam ; Ma, Rubin ; Janz, Siegfried ; Moss, David J. ; Eggleton, Benjamin J.
Author_Institution :
Centre for Ultrahigh Bandwidth Devices for Opt. Syst. (CUDOS), Univ. of Sydney, Sydney, NSW, Australia
Volume :
29
Issue :
12
fYear :
2011
fDate :
6/15/2011 12:00:00 AM
Firstpage :
1790
Lastpage :
1796
Abstract :
We demonstrate silicon-chip-based instantaneous chromatic dispersion monitoring (GVD) for an ultrahigh bandwidth 640 Gbit/s differential phase-shift keying (DPSK) signal. This monitoring scheme is based on cross-phase modulation in a highly nonlinear silicon nanowire. We show that two-photon absorption and free-carrier-related effects do not compromise the GVD monitoring performance, making our scheme a reliable on-chip CMOS-compatible, all-optical, and real-time impairment monitoring approach for up to Terabit/s DPSK signals.
Keywords :
CMOS integrated circuits; differential phase shift keying; elemental semiconductors; integrated optoelectronics; nanowires; silicon; two-photon processes; CMOS; DPSK signals; bit rate 640 Gbit/s; cross-phase modulation; differential phase-shift keying; nonlinear silicon nanowire; real-time impairment monitoring; silicon-chip-based instantaneous chromatic dispersion monitoring; silicon-chip-based real-time dispersion monitoring; two-photon absorption; Modulation; Monitoring; Nonlinear optics; Optical distortion; Optical waveguides; Probes; Silicon; Nonlinear optics; optical performance monitoring (OPM); optical planar waveguides; optical signal processing; spectral analysis;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.2011.2141974
Filename :
5749264
Link To Document :
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