DocumentCode :
1493113
Title :
An Interconnect-Line-Size Optimization Model Considering Scattering Effect
Author :
Zhu, Zhangming ; Wan, Dajing ; Yang, Yintang
Author_Institution :
Inst. of Microelectron., Xidian Univ., Xi´´an, China
Volume :
31
Issue :
7
fYear :
2010
fDate :
7/1/2010 12:00:00 AM
Firstpage :
641
Lastpage :
643
Abstract :
Based on the impact of the scattering effect on latency and bandwidth, this letter presents the quality-factor model that optimizes latency and bandwidth effectively with consideration of the scattering effect. Then, we get the optimization analytical model with target interconnect linewidth and line spacing by the curve-fitting method. The proposed model has been verified and compared for nanoscale CMOS technology. The optimization model is simple, and we can apply it to the interconnect system optimal design of nano-CMOS integrated circuits.
Keywords :
CMOS integrated circuits; Q-factor; circuit optimisation; curve fitting; electromagnetic wave scattering; integrated circuit interconnections; nanoelectronics; curve fitting; interconnect linewidth; interconnect system optimal design; interconnect-line-size optimization model; line spacing; nanoCMOS integrated circuit; nanoscale CMOS technology; optimization analytical model; quality-factor model; scattering effect; Bandwidth; curve fitting; interconnect line size; latency; scattering effect;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2047238
Filename :
5466091
Link To Document :
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