Title :
Wavelength-Tunable Si-Based InGaAs Resonant Cavity Enhanced Photodetectors Using Sol-Gel Wafer Bonding Technology
Author :
Zhang, Lingzi ; Cao, Quan ; Zuo, Yuhua ; Xue, Chunlai ; Cheng, Buwen ; Wang, Qiming
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
fDate :
7/1/2011 12:00:00 AM
Abstract :
We report resonant cavity enhanced (RCE) InGaAs/Si photodetectors fabricated by sol-gel wafer bonding technology. The bonding temperature was 300°C. A 60-μm-diameter photodetector demonstrated dark current density of 0.59 pA/μm2 at 0-V bias and 24.7 pA/μm2 at 2-V reverse bias, peak responsivity of 0.7 A/W, and full-width at half-maximum (FWHM) of 6 nm around 1.55 μm. The 3-dB bandwidth of a 20-μm-diameter photodetector was 17.05 GHz under 1-V reverse bias voltage. Red shift of the resonant wavelength caused by thermo-optic effect was observed. The thermal tuning range achieved 15 nm.
Keywords :
III-V semiconductors; indium compounds; photodetectors; silicon; thermo-optical devices; wafer bonding; InGaAs; Si; bonding temperature; dark current density; full width at half maximum; photodetectors fabricated; red shift; resonant cavity enhanced photodetectors; resonant wavelength; reverse bias voltage; sol-gel wafer bonding technology; thermal tuning; thermo-optic effect; wavelength tunable; Bonding; Distributed Bragg reflectors; Indium gallium arsenide; Indium phosphide; Photodetectors; Silicon; Tuning; Resonant cavity enhanced (RCE) photodetector; silicon photonics; sol-gel wafer bonding; thermal tuning;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2011.2141980
